Henry C. Abbink
24Patents
9h-index
33Co-inventors
75Inventor score
Filing activity: Feb 3, 1975 → Mar 24, 2016
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5926594A | System and method for aligning and attaching optical fibers to optical waveguides, and products obtained thereby | Physics | 59 | Expired |
| US9970999B2 | Nuclear magnetic resonance probe system | Physics | 48 | Active |
| US6146025A | Laser diode and substrate | Electricity | 46 | Expired |
| US5241862A | Integrated accelerometer with single hardstop geometry | Physics | 15 | Expired |
| US4007431A | Cathode construction for long life lasers | Electricity | 15 | Expired |
| US6374672B1 | Silicon gyro with integrated driving and sensing structures | Physics | 12 | Expired |
| US5428996A | Hinge assembly for integrated accelerometer | Physics | 10 | Expired |
| US7239135B2 | NMR gyroscope | Physics | 9 | Expired |
| US7292111B2 | Middle layer of die structure that comprises a cavity that holds an alkali metal | Physics | 9 | Expired |
| US6153258A | Optical fiber rejacketing method, apparatus and product obtained thereby | Performing Operations; Transporting | 8 | Expired |
| US7292031B2 | Micro-cell for NMR gyroscope | Physics | 6 | Expired |
| US4987780A | Integrated accelerometer assembly | Physics | 6 | Expired |
| US6044184A | Integrated optics chip with reduced thermal errors due to pyroelectric effects | Physics | 5 | Expired |
| US5253524A | Integrated accelerometer with coil interface spacer | Physics | 3 | Expired |
| US5191794A | Integrated accelerometer with resilient limit stops | Physics | 3 | Expired |
| US8552725B2 | Systems and methods for obstructing magnetic flux while shielding a protected volume | Emerging Cross-Sectional Technologies | 1 | Active |
| US7973611B2 | Middle layer of die structure that comprises a cavity that holds an alkali metal | Physics | 1 | Active |
| US8579502B2 | Method for determining leak rate through a bond line of a MEMS device | Physics | 1 | Active |
| US8007166B2 | Method for optimizing direct wafer bond line width for reduction of parasitic capacitance in MEMS accelerometers | Physics | 1 | Active |
| US7038293B2 | Dissipation of a charge buildup on a wafer portion | Performing Operations; Transporting | 1 | Expired |
| US7382002B2 | Photo-detector and related instruments | Electricity | 0 | Expired |
| US8530249B2 | Middle layer of die structure that comprises a cavity that holds an alkali metal | Physics | 0 | Active |
| US10330696B2 | Accelerometer sensor system | Physics | 0 | Active |
| US7605013B2 | Photo-detector and related methods | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.