Method of making a load resistor of a static random access memory on a semiconductor wafer
US6046080A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Feb 8, 1999 |
| Grant date | Apr 4, 2000 |
| Priority date | — |
| Expiry date | Feb 8, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D88/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a method of making a load resistor of a static random access memory on a dielectric layer of a semiconductor wafer. This method comprises depositing a poly-silicon layer on the dielectric layer, depositing a silicon-oxy-nitride (SiO.sub.X N.sub.Y) layer on the poly-silicon layer, performing a photolithographic process to define an area for making the load resistor, and performing an etching process to remove the silicon-oxy-nitride layer and the poly-silicon layer in all areas except for the area of the load resistor so as to form the load resistor. The poly-silicon layer of the load resistor is used as a conductive resistance layer, and the silicon-oxy-nitride layer of the load resistor is used as a radiation insulating layer for preventing radiation damages of the load resistor caused by plasma radiation in plasma processes to be performed later on.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.