Patent · US Expired

Passivation technology combining improved adhesion in passivation and a scribe street without passivation

US6046101A · kind A · utility

37Cited by

11References

2Claims

0Family size

Assignee

Intel Corporation · US

Inventors

M. Lawrence A. Dass · Fremont, US
Krishna Seshan · San Jose, US
Isaura S. Gaeta · Sunnyvale, US

Key dates

Filing date	Dec 31, 1997
Grant date	Apr 4, 2000
Priority date	—
Expiry date	Dec 31, 2017

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10S438/958
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

An integrated circuit passivation layer including a first passivation layer portion of silicon nitride treated with nitrous oxide and a second passivation layer portion of polyimide. Also, a method of passivating an integrated circuit wafer including depositing a first passivation layer over the top surface of an integrated circuit wafer having a scribe street area between adjacent integrated circuit device portions, depositing a second passivation layer over the first passivation layer, and patterning the first passivation layer and the second passivation layer to expose the scribe street area.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.