Plasma processing apparatus having insulator disposed on inner surface of plasma generating chamber
US6046425A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 7, 1995 |
| Grant date | Apr 4, 2000 |
| Priority date | — |
| Expiry date | Jun 7, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32706
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma processing apparatus includes a plasma processing chamber defining a plasma region. The plasma processing chamber has an inner metallic portion defining at least a portion of the plasma region. The plasma processing apparatus also includes a sample table disposed in the plasma region for holding a sample to be subjected to plasma processing, elements for applying an AC voltage to the sample table, elements for generating a plasma, including a region of intense plasma, in the plasma region independently of the AC voltage applied to the sample table such that the AC voltage applied to the sample table has no effect on the generation of the plasma, and an insulator having a thickness of several tens to several hundreds of micrometers (.mu.m) disposed on the inner metallic portion of the plasma processing chamber in a neighborhood of the region of intense plasma.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.