Large area low mass IR pixel having tailored cross section
US6046485A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 1, 1999 |
| Grant date | Apr 4, 2000 |
| Priority date | — |
| Expiry date | Apr 1, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/184
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The present invention provides a much more optimum design for an infrared pixel microstructure. The configuration of the microstructure itself is designed to optimum operational characteristics including faster speeds than previously available. These faster speeds are achieved by reducing the thermal mass of the pixel itself, thus directly affecting the pixels associated thermal time constant. Thermal mass is reduced by tailoring the cross section of the pixel structure such that protective layers are substantially reduced in areas where they are not necessary. This results in the desired reduction and overall pixel mass and consequently more optimum pixel performance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.