Semiconductor device having conductive layer and manufacturing method thereof
US6046488A · kind A · utility
9Cited by
7References
4Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Dec 4, 1997 |
| Grant date | Apr 4, 2000 |
| Priority date | — |
| Expiry date | Dec 4, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device allowing the manufacturing process to be simplified and fine structures therein to be readily formed and a manufacturing method thereof are provided. In the semiconductor device, a conductive layer is used as a mask during etching for forming a first opening.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.