Metalization system having an enhanced thermal conductivity

US6046503A · kind A · utility

Assignee

• Siemens Aktiengesellschaft · DE

Inventors

• Peter Weigand · Unterhaching, DE
• Dirk Tobben · Fishkill, US

Key dates

• Filing date: Sep 26, 1997
• Grant date: Apr 4, 2000
• Expiry date: Sep 26, 2017

Classification

• Technology area (CPC H): Electricity
• CPC primary: H05K3/4676
• WIPO field: Audio-visual technology
• WIPO sector: Electrical engineering

Abstract

A multi-level integrated circuit metalization system having a composite dielectric layer comprising a layer 22 of diamond or sapphire. A plurality of patterned metalization layers is disposed over a semiconductor substrate 10. A composite dielectric layer is disposed between a pair of the metalization layers. The composite dielectric layer 22 comprises a layer of diamond or sapphire. The diamond or sapphire layer has disposed on a surface thereof one of the patterned metalization layers. A conductive via 34 passes through the composite layer. One end of the conductive via is in contact with diamond or sapphire layer. The diamond or sapphire layer conducts heat laterally along from the metalization layer disposed thereon to a heat sink provided by the conductive via. The patterned diamond or sapphire layer provides a mask during the second metalization deposition. Thus, the leads of the next metalization layer will be deposited directly on the diamond or sapphire layer which will serve as an etch stop during the metal etching process.