GaAsP epitaxial wafer and a method for manufacturing it
US6048397A · kind A · utility
7Cited by
5References
1Claims
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Key dates
| Filing date | Dec 29, 1997 |
| Grant date | Apr 11, 2000 |
| Priority date | — |
| Expiry date | Dec 29, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8242
Abstract
A GaAsP epitaxial wafer 10 which has a GaAs.sub.1-x P.sub.x (0.45<x<1) constant nitrogen concentration layer 6 formed by doping a constant composition layer with nitrogen wherein the constant nitrogen concentration layer 6 has the following upper and lower limits of nitrogen concentration: EQU Upper limit: N=(6.25x-1.125).times.10.sup.18 cm.sup.-3 EQU Lower limit: N=(5x-1.5).times.10.sup.18 cm.sup.-3
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