Patent · US Expired

Gapfill of semiconductor structure using doped silicate glasses

US6048475A · kind A · utility

4Cited by

3References

9Claims

0Family size

Assignee

Siemens Aktiengesellschaft · DE

Inventors

Markus Kirchhoff · Radeberg, DE
Matthias Ilg · Fishkill, US

Key dates

Filing date	Sep 28, 1999
Grant date	Apr 11, 2000
Priority date	—
Expiry date	Sep 28, 2019

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/76837
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Improved gap fill of narrow spaces is achieved by using a doped silicate glass having a dopant concentration in a bottom portion thereof which is greater than an amount which causes surface crystal growth and in an upper portion thereof having a lower dopant concentration such that the overall dopant concentration of the doped silicate glass is below that which causes surface crystal growth.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.