Markus Kirchhoff
16Patents
5h-index
28Co-inventors
58Inventor score
Filing activity: Dec 18, 1996 → Feb 25, 2005
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5807792A | Uniform distribution of reactants in a device layer | Electricity | 190 | Expired |
| US6483172B1 | Semiconductor device structure with hydrogen-rich layer for facilitating passivation of surface states | Electricity | 57 | Expired |
| US6673693B2 | Method for forming a trench in a semiconductor substrate | Electricity | 54 | Expired |
| US6057250A | Low temperature reflow dielectric-fluorinated BPSG | Electricity | 12 | Expired |
| US5866485A | Techniques for etching a silicon dioxide-containing layer | Electricity | 5 | Expired |
| US6096654A | Gapfill of semiconductor structure using doped silicate glasses | Electricity | 5 | Expired |
| US7078313B2 | Method for fabricating an integrated semiconductor circuit to prevent formation of voids | Electricity | 5 | Expired |
| US7141507B2 | Method for production of a semiconductor structure | Electricity | 4 | Expired |
| US6677218B2 | Method for filling trenches in integrated semiconductor circuits | Electricity | 4 | Expired |
| US6048475A | Gapfill of semiconductor structure using doped silicate glasses | Electricity | 4 | Expired |
| US7368390B2 | Photolithographic patterning process using a carbon hard mask layer of diamond-like hardness produced by a plasma-enhanced deposition process | Electricity | 2 | Expired |
| US6713364B2 | Method for forming an insulator having a low dielectric constant on a semiconductor substrate | Electricity | 2 | Expired |
| US6759323B2 | Method for filling depressions in a surface of a semiconductor structure, and a semiconductor structure filled in this way | Electricity | 2 | Expired |
| US6562734B2 | Method of filling gaps on a semiconductor wafer | Electricity | 1 | Expired |
| US6380076B2 | Dielectric filling of electrical wiring planes | Electricity | 1 | Expired |
| US6380074B1 | Deposition of various base layers for selective layer growth in semiconductor production | Electricity | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.