Method for making die-compensated threshold tuning circuit
US6048746A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jun 8, 1998 |
| Grant date | Apr 11, 2000 |
| Priority date | — |
| Expiry date | Jun 8, 2018 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R31/2621
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
To compensate for process, activity and environmental variations in a semiconductor device, a back-bias potential tuning circuit is formed on a semiconductor die. The tuning circuit tunes a bias potential applied to the semiconductor die to maintain a predetermined ratio between a transistor on-current and a transistor off-current through at least one channel region. Then, a leakage current is measured for multiple transistors formed in the semiconductor die to determine a representative leakage of the semiconductor die. Tuning characteristics of the back-bias potential tuning circuit are then set to match the representative leakage of the semiconductor die.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.