Semiconductor device using gold bumps and copper leads as bonding elements
US6049130A · kind A · utility
20Cited by
4References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 9, 1997 |
| Grant date | Apr 11, 2000 |
| Priority date | — |
| Expiry date | May 9, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/01322
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device comprises a semiconductor chip, an Au bump formed on the semiconductor chip, and Cu lead bonded to the Au bump through a bonding part. The Cu lead has a Cu core and a plated Sn layer formed on the Cu core, and the bonding part is formed of an Au-rich Au--Cu--Sn alloy of a ternary system having a single-phase structure containing 15 at. % or less Sn and 25 at. % or less Cu.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.