Thin film forming apparatus
US6051120A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 24, 1998 |
| Grant date | Apr 18, 2000 |
| Priority date | — |
| Expiry date | Nov 24, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3233
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
There is provided a thin film forming apparatus in which plasma of high frequency is made of raw material gas in a film forming chamber 7, a thin film is formed on a surface of a substrate 12 in the film forming chamber 7 by the plasma of high frequency, and a characteristic of the thin film is controlled by irradiating ion beams 4 onto the surface of the substrate 12 at the same time, characterized in that: the substrate 12 is composed of a square plate having a regular square surface or a rectangular surface; and the thin film forming apparatus is provided with a high frequency electrode 13 for forming the plasma of high frequency into a cube or a rectangular parallelepiped to cover an overall surface of the substrate 12, on the surface side of the substrate 12.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.