Semiconductor supporting device
US6051303A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 28, 1998 |
| Grant date | Apr 18, 2000 |
| Priority date | — |
| Expiry date | Jul 28, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24347
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor-supporting device comprising a substrate made of an aluminum nitride-based ceramic material and having a semiconductor-placing surface, wherein an orientation degree of the aluminum nitride-based ceramic material specified by the following formula is not less than 1.1 and not more than 2.0. EQU Orientation degree=[I'(002)/I'(100)]/[I(002)/I(100)] in which in an X-ray diffraction measurement, I'(002) is a diffraction intensity of a (002) face of the aluminum nitride-based ceramic material when X-rays are irradiated from the semiconductor-placing surface, I'(100) is a diffraction intensity of a (100) face of the aluminum nitride-based ceramic material when X-rays are irradiated from the semiconductor-placing surface, I(002) is a diffraction intensity of the (002) face of the aluminum nitride ceramic according to a JCPDS Card No. 25-1133, and I(100) is a diffraction intensity of the (100) face of the aluminum nitride ceramic according to a JCPDS Card No. 25-1133.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.