Multiple reduction photolithography technique
US6051344A · kind A · utility
12Cited by
8References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 27, 1998 |
| Grant date | Apr 18, 2000 |
| Priority date | — |
| Expiry date | Mar 27, 2018 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/00
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A photolithography method for creating very small line dimensions includes making a mask by exposing a mask blank through a reticle in a reduction photolithography exposure tool, at a reduction of N. The fabricated mask is then placed in a second photolithography exposure tool at a second reduction M, to expose a wafer substrate at a reduction of M. The resulting patterned substrate will have a critical dimension equaling the critical dimension of the original reticle, divided by the factor N times M. In this manner, very small size patterns can be created even though a larger pattern starting reticle is used.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.