Semiconductor device and method of manufacturing thereof
US6051484A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Mar 6, 1997 |
| Grant date | Apr 18, 2000 |
| Priority date | — |
| Expiry date | Mar 6, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28593
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a semiconductor device, comprises the steps of: depositing a first insulating film on a semiconductor substrate, and then, applying a photo resist to the first insulating film to align and develop the photo resist to form a first photo resist pattern; side-etching the first insulating film, by a predetermined size from an end portion of the first photo resist pattern, using the first photo resist pattern as a mask; depositing a second insulating film on the entire surface of the semiconductor substrate to form a gap above the semiconductor substrate between the first and second insulating films; removing the first photo resist pattern; and forming a gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.