Method of manufacturing a wiring layer in semiconductor device
US6051492A · kind A · utility
10Cited by
4References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 27, 1996 |
| Grant date | Apr 18, 2000 |
| Priority date | — |
| Expiry date | Nov 27, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S408/707
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a metal wiring layer in a semiconductor device, wherein an insulating layer is plasma treated before a tungsten nitride film is formed on the insulating layer. A metal, metal silicide or metal alloy thereafter being deposited over the tungsten nitride film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.