Hybrid sensor pixel architecture with threshold response

US6051827A · kind A · utility

Assignee

• Xerox Corporation · US

Inventors

• Ping Mei · Palo Alto, US
• Andrew J. Moore · Dallas, US
• Raj B. Apte · Palo Alto, US
• Steven E. Ready · Los Altos, US
• Robert A. Street · Palo Alto, US
• James B. Boyce · Los Altos, US

Key dates

• Filing date: Apr 28, 1998
• Grant date: Apr 18, 2000
• Expiry date: Apr 28, 2018

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/803

Abstract

A pixel circuit construction for image sensing includes a photosensor, an amplifier, a selector switch and, and a reset switch. The amplifier may be a single polycrystalline silicon (channel) transistor for high gain. The selector switch may also be a single polycrystalline silicon (channel) transistor for high conductivity. The reset switch may a single amorphous crystalline silicon (channel) transistor for low leakage current. The photosensor and amplifier may be connected to a shared bias line or may be connected to separate bias and drive lines, respectively. The selector and reset switches may be connected to a shared data line or may be connected to separate data and reset lines, respectively. Laser crystallization and rehydrogenation techniques are well suited to obtaining devices described herein. Threshold response is provided.