Integrated semiconductor device comprising a chemoresistive gas microsensor and manufacturing process thereof
US6051854A · kind A · utility
15Cited by
9References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 3, 1998 |
| Grant date | Apr 18, 2000 |
| Priority date | — |
| Expiry date | Jun 3, 2018 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N27/12
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An integrated semiconductor device comprises, reciprocally superimposed, a thermally insulating region; a thermal conduction region of a high thermal conductivity material; a passivation oxide layer; and a gas sensitive element. The thermal conduction region defines a preferential path towards the gas sensitive element for the heat generated by the heater element, thereby the heat dispersed towards the substrate is negligible during the operation of the device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.