Method for performing on-wafer tuning of thin film bulk acoustic wave resonators (FBARS)
US6051907A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Oct 10, 1996 |
| Grant date | Apr 18, 2000 |
| Priority date | — |
| Expiry date | Oct 10, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H2003/0428
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A method for tuning a Thin Film Bulk Acoustic Wave Resonator (FBAR) located on a wafer. The FBAR comprises a plurality of layers having respective thicknesses. The FBAR exhibits at least one of a series resonance and a parallel resonance at respective frequencies that are a function of the thickness of at least one of the layers. A first step of the method includes measuring a frequency at which the FBAR exhibits one of a series resonance and a parallel resonance. A next step includes calculating an amount (A) by which the thickness of the at least one layer needs to be altered in order to minimize a difference between the measured frequency and a reference frequency. A further step includes altering the thickness of the at least one layer by the amount (A).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.