Method and apparatus for measuring the concentration of ions implanted in semiconductor materials
US6052185A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 30, 1997 |
| Grant date | Apr 18, 2000 |
| Priority date | — |
| Expiry date | Jun 30, 2017 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N21/17
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method and apparatus that determines a concentration of ions implanted in a material is described. The method includes the steps of: (1) passing an excitation pulse through a diffracting mask (e.g., a phase or amplitude mask) to generate at least two excitation laser sub-pulses; (2) irradiating a region of the material with a grating pattern, formed by overlapping two excitation laser sub-pulses in time and space to initiate a time-dependent response (e.g., a change in refractive index) in the region; (3) diffracting a probe laser pulse having a duration that is at least long as the time-dependent response off the region to generate a time-dependent signal beam; (4) detecting the time-dependent signal beam to generate a signal waveform; and (5) processing the signal waveform to determine the concentration of ions implanted in the material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.