High-speed synchronous write control scheme
US6052328A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 22, 1997 |
| Grant date | Apr 18, 2000 |
| Priority date | — |
| Expiry date | Dec 22, 2017 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/4096
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present invention provides a method and apparatus that accomplishes a high performance, random read/write SDRAM design by synchronizing the read and write operations at the data line sense amplifier. This enables the design to perform random read and write operations without varying cycle time issues or unbalanced margin issues. The data lines are used as bi-directional lines to accomplish high performance reads and writes with minimal additional wiring overhead required. During a read operation, read data is transferred from the memory cells of the device across a series of consecutive pairs of data lines to an input/output port of the memory device. The first pair of data lines is coupled to a data line sense amplifier. The additional pairs of data lines are coupled to additional amplifiers. During a read operation, data is transferred across the consecutive pairs of data lines according to the timing cycles of the respective amplifiers. In order to quickly drive the data signals during a write operation up the series of consecutive pairs of data lines, the timing signals for each of the pairs of data lines except the first pair of data lines are disabled so that the data lin…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.