Plasma-assisted metallic film deposition
US6053123A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Apr 29, 1998 |
| Grant date | Apr 25, 2000 |
| Priority date | — |
| Expiry date | Apr 29, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05H1/30
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An apparatus and method for depositing thin films on the surface of a device such as a spherical shaped devices. The apparatus includes an enclosure containing a plurality of apertures and two chambers. The apertures connect to conduits for inputting and outputting the devices as well as injecting and releasing different gases and/or processing constituents. A first chamber is formed within the enclosure and includes a plasma torch. A second chamber is formed within the enclosure and includes a heating coil. Devices move through the input conduit and into the first chamber where they are heated by the plasma torch. Because of this heating, radicals, electrons, and ions near the surface of the devices are generated. The heated devices then move into the second chamber where they are further heated by energy from the conductor coil. At this time, the gases and/or processing constituents react with the heated device thereby growing a thin film on its outer surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.