Method for plasma treatment and apparatus for plasma treatment
US6054063A · kind A · utility
13Cited by
6References
13Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 22, 1998 |
| Grant date | Apr 25, 2000 |
| Priority date | — |
| Expiry date | Jun 22, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32192
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The high-frequency electric field is subjected to pulse modulation for 10 to 100 .mu.sec; the rise time of pulse is controlled to be not shorter than 2 .mu.sec but not longer than 50 .mu.sec; and the descent time of pulse is controlled to be not shorter than 10 .mu.sec but not longer than .phi..mu.sec. Thereby, the electron temperature in plasma is controlled at 2 eV or lower and the fluctuation of the density of negative ion in plasma is controlled at 20% or smaller.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.