Hiroto Ohtake
25Patents
6h-index
42Co-inventors
69Inventor score
Filing activity: Jun 22, 1998 → Jun 1, 2018
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US10340123B2 | Multi-frequency power modulation for etching high aspect ratio features | Electricity | 40 | Active |
| US9087798B2 | Etching method | Electricity | 38 | Active |
| US6054063A | Method for plasma treatment and apparatus for plasma treatment | Electricity | 13 | Expired |
| US7701060B2 | Wiring structure and method for manufacturing the same | Electricity | 12 | Expired |
| US8664125B2 | Highly selective spacer etch process with reduced sidewall spacer slimming | Electricity | 8 | Active |
| US7999392B2 | Multilayer wiring structure, semiconductor device, pattern transfer mask and method for manufacturing multilayer wiring structure | Electricity | 7 | Active |
| US6972453B2 | Method of manufacturing a semiconductor device capable of etching a multi-layer of organic films at a high selectivity | Electricity | 6 | Expired |
| US7622808B2 | Semiconductor device and having trench interconnection | Electricity | 5 | Expired |
| US8278763B2 | Semiconductor device | Electricity | 5 | Active |
| US10529589B2 | Method of plasma etching of silicon-containing organic film using sulfur-based chemistry | Electricity | 4 | Active |
| US8043957B2 | Semiconductor device, method for manufacturing semiconductor device and apparatus for manufacturing semiconductor | Electricity | 4 | Active |
| US8592303B2 | Wiring structure and method for manufacturing the same | Electricity | 2 | Active |
| US9570312B2 | Plasma etching method | Electricity | 1 | Active |
| US9502537B2 | Method of selectively removing a region formed of silicon oxide and plasma processing apparatus | Electricity | 1 | Active |
| US9105585B2 | Etching method | Electricity | 1 | Active |
| US7482694B2 | Semiconductor device and its manufacturing method | Electricity | 1 | Expired |
| US9412607B2 | Plasma etching method | Electricity | 1 | Active |
| US8808562B2 | Dry metal etching method | Electricity | 1 | Active |
| US9305795B2 | Plasma processing method | Electricity | 1 | Active |
| US8803285B2 | Semiconductor device capable of reducing interelectrode leak current and manufacturing method thereof | Electricity | 1 | Active |
| US9373520B2 | Multilayer film etching method and plasma processing apparatus | Electricity | 1 | Active |
| US10381238B2 | Process for performing self-limited etching of organic materials | Electricity | 0 | Active |
| US10410873B2 | Power modulation for etching high aspect ratio features | Electricity | 0 | Active |
| US9034698B2 | Semiconductor device manufacturing method | Electricity | 0 | Active |
| US10115591B2 | Selective SiARC removal | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.