Lifetime control for semiconductor devices
US6054369A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 30, 1997 |
| Grant date | Apr 25, 2000 |
| Priority date | — |
| Expiry date | Jun 30, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0105
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of controlling minority carrier lifetime in a semiconductor device in which the density of recombination centers is controlled so that the recombination centers are concentrated in a thin buffer layer adjacent a blocking layer in one of two bonded wafers. The density is controlled by misaligning crystal axes of the two wafers or by doping the bonding surface of one of the wafers before the wafers are bonded. Both methods generate recombination centers in the thin buffer layer that forms around or adjacent the bonding interface. A semiconductor device made by this method includes a buffer layer with a significantly higher density of recombination centers than the adjacent blocking layer to thereby improve control of minority carrier lifetime.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.