Method of delaminating a pre-fabricated transistor layer from a substrate for placement on another wafer
US6054370A · kind A · utility
246Cited by
10References
16Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 30, 1998 |
| Grant date | Apr 25, 2000 |
| Priority date | — |
| Expiry date | Jun 30, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/915
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a film of active devices is provided. First damaged regions are formed, in a substrate, underneath first areas of the substrate where active devices are to be formed. Active devices are formed onto the first areas. Second damaged regions are formed, in the substrate, between the first damaged regions. The film is caused to detach from a rest of the substrate at a location where the first and second damaged regions are formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.