Ultra fast temperature ramp up and down in a furnace using interleaving shutters
US6054684A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 5, 1997 |
| Grant date | Apr 25, 2000 |
| Priority date | — |
| Expiry date | Nov 5, 2017 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B31/12
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
One embodiment of the instant invention is a process chamber for heating a semiconductor wafer, the process chamber comprising: heating elements (elements 104 of FIG. 2a) for providing heating energy; means for holding (means 112 of FIG. 2a) the semiconductor wafer; and shutters situated between the heating elements and the means for holding the semiconductor wafer, the shutters (shutters 108 of FIGS. 2a and 2b and shutters of FIGS. 2c and 2d for blocking the heating energy from getting to the semiconductor wafer when the shutters are in a closed position and for directing the heating energy to the semiconductor wafer when in an open position. Preferably, the shutters are comprised of: an outer surface which is coated with a material which reflects the heating energy back towards the heating elements when the shutters are in the closed position; an inner surface which faces the means for holding the semiconductor wafer when the shutters are in the dosed position; an axis which the shutters revolve around so as to open and close; and an insulating material situated between the inner and outer surfaces.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.