Inventor · Richardson, TX, US

Michael F. Pas

21Patents
7h-index
15Co-inventors
66Inventor score

Filing activity: Oct 4, 1996 → Aug 7, 2018

Most-cited inventions

PatentTitleAreaCited byStatus
US7795097B2 Semiconductor device manufactured by removing sidewalls during replacement gate integration scheme Electricity 57 Active
US8525386B2 Dynamically adjustable orthotic device Electricity 12 Active
US5803980A De-ionized water/ozone rinse post-hydrofluoric processing for the prevention of silicic acid residue Electricity 12 Expired
US8749115B2 Dynamically adjustable orthotic device Electricity 11 Active
US6054684A Ultra fast temperature ramp up and down in a furnace using interleaving shutters Chemistry; Metallurgy 10 Expired
US7642153B2 Methods for forming gate electrodes for integrated circuits Electricity 9 Active
US7416949B1 Fabrication of transistors with a fully silicided gate electrode and channel strain Electricity 8 Active
US8114728B2 Integration scheme for an NMOS metal gate Electricity 6 Active
US7629212B2 Doped WGe to form dual metal gates Electricity 4 Active
US7807522B2 Lanthanide series metal implant to control work function of metal gate electrodes Electricity 3 Active
US7858459B2 Work function adjustment with the implant of lanthanides Electricity 3 Active
US7531398B2 Methods and devices employing metal layers in gates to introduce channel strain Electricity 3 Active
US8304333B2 Method of forming a high-k gate dielectric layer Electricity 2 Active
US10068786B1 Data structures for semiconductor die packaging Electricity 2 Active
US8304342B2 Sacrificial CMP etch stop layer Emerging Cross-Sectional Technologies 2 Active
US8748246B2 Integration scheme for dual work function metal gates Electricity 1 Active
US7799669B2 Method of forming a high-k gate dielectric layer Electricity 1 Active
US10658211B2 Data structures for semiconductor die packaging Electricity 0 Active
US8802519B2 Work function adjustment with the implant of lanthanides Electricity 0 Active
US8409943B2 Work function adjustment with the implant of lanthanides Electricity 0 Active
US8629021B2 Integration scheme for an NMOS metal gate Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.