High density MOS technology power device

US6054737A · kind A · utility

Assignees

• SGS-Thomson Microelectronics S.A. · IT
• Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno · IT

Inventors

• Angelo Magri' · Decima, IT
• Ferruccio Frisina · Gravina di Catania, IT
• Giuseppe Ferla · Catania, IT

Key dates

• Filing date: Oct 29, 1996
• Grant date: Apr 25, 2000
• Expiry date: Oct 29, 2016

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/155

Abstract

A MOS technology power device comprises a semiconductor material layer of a first conductivity type, a plurality of elementary functional units, a first insulating material layer placed above the semiconductor material layer and a conductive material layer placed above the first insulating material layer. Each elementary functional unit includes an elongated body region of a second conductivity type formed in the semiconductor material layer. Each elementary functional unit further includes a first elongated window in the conductive material layer extending above the elongated body region. Each elongated body region includes a source region doped with dopants of the first conductivity type, intercalated with a portion of the elongated body region wherein no dopant of the first conductivity type are provided. The MOS technology power device further includes a second insulating material layer disposed above the conductive material layer and disposed along elongated edges of the first elongated window. The second insulating material layer includes a second elongated window extending above each elongated body region. The second insulating material layer seals the edges of the conductiv…