Electric solid state device and method for manufacturing the device
US6054770A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 12, 1997 |
| Grant date | Apr 25, 2000 |
| Priority date | — |
| Expiry date | Aug 12, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An electric solid state device comprises a substrate, an amorphous thin film formed on the substrate, and a conductive thin film formed on the amorphous thin film. In this device, an interatomic distance calculated from a peak position of a halo pattern appearing in diffraction measurement of the material of the amorphous thin film is substantially equal to an interplanar space between those two adjacent specific crystal planes of the material of the conductive thin film, which are defined at least by respective atomic strings arranged in a predetermined direction in the respective planes and separated from each other by the smallest interatomic distance possible.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.