Dynamic random access memory word line boost technique employing a boost-on-writes policy
US6055192A · kind A · utility
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5References
24Claims
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Key dates
| Filing date | Sep 3, 1998 |
| Grant date | Apr 25, 2000 |
| Priority date | — |
| Expiry date | Sep 3, 2018 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C8/08
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A word line boost-on-writes technique for a dynamic random access memory device in which the word lines are initially boosted upon opening of a page in the memory array and then again following each write command, or following a predetermined number of write cycles in the case of a burst write, in order that the precharge cycle can proceed without delay due to the boost operation. Each boost is applied for a limited duration so that the overall precharge time is not affected.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.