Method for making bonded metal back-plane substrates
US6057212A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 4, 1998 |
| Grant date | May 2, 2000 |
| Priority date | — |
| Expiry date | May 4, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76251
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a semiconductor structure, includes steps of growing an oxide layer on a substrate to form a first wafer, separately forming a metal film on an oxidized substrate to form a second wafer, attaching the first and second wafers, performing a heat cycle for the first and second wafers to form a bond between the first and second wafers, and detaching a portion of the first wafer from the second wafer. Thus, a device, such as a back-plane for a semiconductor device, formed by the method includes an oxidized substrate, a metal film formed on the oxidized substrate forming a back-gate, a back-gate oxide formed on the back-gate, and a silicon layer formed on the back-gate oxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.