Silicon-on-insulation trench isolation structure and method for forming
US6057214A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Dec 9, 1997 |
| Grant date | May 2, 2000 |
| Priority date | — |
| Expiry date | Dec 9, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76283
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A silicon-on-insulator trench isolation structure is disclosed that includes an active silicon-on-insulator region, an active bulk substrate region, and a trench region positioned between the active silicon-on-insulator region and the active bulk substrate region. The active silicon-on-insulator region is provided with a silicon-on-insulator film (42) positioned above a buried insulator layer (32). The active bulk substrate region may be provided between two trench regions such as a trench region (20) and a trench region (22). The trench region (20) is positioned between the active silicon-on-insulator region and the active bulk substrate region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.