Air gap based low dielectric constant interconnect structure and method of making same
US6057226A · kind A · utility
57Cited by
4References
17Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 25, 1997 |
| Grant date | May 2, 2000 |
| Priority date | — |
| Expiry date | Nov 25, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An air bridge between closely spaced interconnect lines is formed by a high density plasma chemical vapor deposition of fluorinated amorphous carbon. In one particular embodiment of the present invention, to create the air bridge, high density plasma chemical vapor deposition of fluorocarbon and hydrocarbon precursors, with little or no rf bias applied to the substrate is performed. For mechanical support of subsequently formed layers, the air bridge is capped by a hard mask layer, typically formed from an insulating material such as silicon dioxide, fluorinated silicon dioxide, or silicon nitride.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.