Method for fabricating semiconductor device and method for controlling environment inside reaction chamber of dry etching apparatus
US6057247A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 28, 1998 |
| Grant date | May 2, 2000 |
| Priority date | — |
| Expiry date | Oct 28, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31116
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a semiconductor device according to the present invention includes the steps of: forming an oxide film on a substrate having a silicon region at least on the surface thereof; defining a resist pattern on the oxide film; placing the substrate on an electrode provided inside a reaction chamber of a plasma etching apparatus, and etching the oxide film by using plasma generated from a gas including a fluorocarbon gas with a bias voltage applied to the substrate; and removing fluorine from the reaction chamber by generating oxygen plasma inside the reaction chamber with substantially no bias voltage applied to the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.