Method for forming interlevel dielectric layer in semiconductor device using electron beams
US6057251A · kind A · utility
33Cited by
8References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 1, 1998 |
| Grant date | May 2, 2000 |
| Priority date | — |
| Expiry date | Oct 1, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31053
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for stabilizing an interlevel dielectric layer formed by a chemical vapor deposition (CVD) process, using electron beams. A CVD oxide layer is formed on a semiconductor substrate. The CVD oxide layer is radiated with electron beams at a temperature of between approximately room temperature and approximately 500.degree. C. for a predetermined time, using an electron beam radiator, to densify the layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.