Ju-Seon Goo
17Patents
8h-index
26Co-inventors
68Inventor score
Filing activity: Jul 10, 1997 → Apr 13, 2011
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6566229B2 | Method of forming an insulating layer in a trench isolation type semiconductor device | Electricity | 55 | Expired |
| US5989983A | Method of fabricating and curing spin-on-glass layers by electron beam irradiation | Electricity | 41 | Expired |
| US6057251A | Method for forming interlevel dielectric layer in semiconductor device using electron beams | Electricity | 33 | Expired |
| US6635586B2 | Method of forming a spin-on-glass insulation layer | Electricity | 21 | Expired |
| US6489252B2 | Method of forming a spin-on-glass insulation layer | Electricity | 14 | Expired |
| US7674685B2 | Semiconductor device isolation structures and methods of fabricating such structures | Electricity | 12 | Active |
| US6117785A | Multiple etch methods for forming contact holes in microelectronic devices including SOG layers and capping layers thereon | Electricity | 12 | Expired |
| US7192891B2 | Method for forming a silicon oxide layer using spin-on glass | Electricity | 9 | Expired |
| US6368906B1 | Method of planarization using selecting curing of SOG layer | Electricity | 8 | Expired |
| US7332409B2 | Methods of forming trench isolation layers using high density plasma chemical vapor deposition | Electricity | 6 | Expired |
| US7517817B2 | Method for forming a silicon oxide layer using spin-on glass | Electricity | 5 | Active |
| US7842569B2 | Flash memory device and method of fabricating the same | Electricity | 3 | Active |
| US8043914B2 | Methods of fabricating flash memory devices comprising forming a silicide on exposed upper and side surfaces of a control gate | Electricity | 3 | Active |
| US7358190B2 | Methods of filling gaps by deposition on materials having different deposition rates | Electricity | 3 | Expired |
| US6645879B2 | Method of forming a silicon oxide layer of a semiconductor device and method of forming a wiring having the same | Emerging Cross-Sectional Technologies | 2 | Expired |
| US8492223B2 | Methods of manufacturing flash memory devices by selective removal of nitrogen atoms | Electricity | 0 | Active |
| US7781304B2 | Semiconductor device having trench isolation region and methods of fabricating the same | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.