High efficiency light emitting diode with distributed Bragg reflector
US6057562A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 18, 1997 |
| Grant date | May 2, 2000 |
| Priority date | — |
| Expiry date | Apr 18, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8162
Abstract
A structure of a light emitting diode (LED) having high brightness is disclosed. This LED includes a substrate on a first electrode, a first cladding layer of a first conductivity type on the substrate, an active layer on the first cladding layer, a second cladding layer of a second conductivity type on the active layer, a window layer of the second conductivity type on the second cladding layer, wherein the electrical resistivity of the window layer is less than that of the second cladding layer, a contact layer of the second conductivity type on the window layer for providing ohmic contact, and a conductive transparent oxide layer on the contact layer, wherein the electrical resistivity of the conductive transparent oxide layer is less than that of the window layer and the contact layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.