Compound semiconductor epitaxial wafer
US6057592A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 21, 1998 |
| Grant date | May 2, 2000 |
| Priority date | — |
| Expiry date | Oct 21, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/815
Abstract
At the time of forming an alloy composition gradient layer 4 of gallium arsenide phosphide GaAs.sub.x P.sub.1-x having an arsenic alloy composition x changed in such a range as not to exceed a predetermined alloy composition a with an increase of a layer thickness d between a GaP layer 3 and a composition constant layer 5 of gallium arsenide phosphide GaAs.sub.a P.sub.1-a having the predetermined alloy composition a to be grown above the GaP layer; the alloy composition x is abruptly ascended as in composition ascending zones C11 to C13 with the ascended thickness d of an epitaxial layer and then descended as in crystal stabilizing zones S11 to S13 in such a range as not to cancel the previous ascent amount. One or more combinations of such ascent and descent in the alloy composition are repeated to form as distributed in the alloy composition gradient layer 4, and then the alloy composition x is ascended to the predetermined alloy composition a. Thereby there is obtained a compound semiconductor epitaxial wafer which can effectively eliminate stresses caused by lattice mismatching, can be made thinner with an excellent productivity, and can have a high luminance due to employment …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.