Output circuit for power IC with high breakdown voltage
US6057726A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Apr 3, 1998 |
| Grant date | May 2, 2000 |
| Priority date | — |
| Expiry date | Apr 3, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K17/063
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
An output circuit for a high-breakdown-voltage power IC is provided. The output circuit includes a level-shift circuit on constant-current type including an output terminal connected to the gate of a p-channel MOSFET with a high breakdown voltage; a totem-pole circuit including an n-channel MOSFET with a high breakdown voltage on the high potential side of the totem-pole circuit, the gate of which is connected to the drain of the MOSFET via a high resistance; an n-channel MOSFET with a high breakdown voltage on the low potential side of the totem-pole circuit, and one single power supply having a plurality of terminals, the voltages thereof are different, used for a low-voltage power supply for driving the level-shift circuit and a high-voltage power supply for driving the totem-pole circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.