Method of forming an integrated circuit device having cyanate ester buffer coat
US6060343A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 25, 1999 |
| Grant date | May 9, 2000 |
| Priority date | — |
| Expiry date | Feb 25, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49171
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated circuit including a fabricated die having a cyanate ester buffer coating material thereon. The cyanate ester buffer coating material includes one or more openings for access to the die. A package device may be connected to the die bond pads through such openings. Further, an integrated circuit device is provided that includes a fabricated wafer including a plurality of integrated circuits fabricated thereon. The fabricated wafer has an upper surface with a cyanate ester buffer coating material cured on the upper surface of the fabricated integrated circuit device. Further, a method of producing an integrated circuit device includes providing a fabricated wafer including a plurality of integrated circuits and applying a cyanate ester coating material on a surface of the fabricated wafer. The application of cyanate ester coating material may include spinning the cyanate ester coating material on the surface of the fabricated wafer to form a buffer coat.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.