Insulated-gate semiconductor device having a contact region in electrical contact with a body region and a source region
US6060731A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 27, 1998 |
| Grant date | May 9, 2000 |
| Priority date | — |
| Expiry date | Jul 27, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
Abstract
A MOSFET wherein the formation of a channel in a channel formation region is controlled by a voltage applied to an insulated gate, comprising: a semiconductor substrate; a first semiconductor layer (drain region) of a first conductivity type formed on a surface of the semiconductor substrate; a second semiconductor layer (body region) of a second conductivity type provided within the first semiconductor layer, where a part thereof forms the channel formation region; a third semiconductor layer (source region) of the first conductivity type provided selectively in the second semiconductor layer; and a body contact region in electrical contact with the second semiconductor layer. The body contact region is formed in an area that is separated from an active region by a non-active region. With this structure, parasitic bipolar transistors operate simultaneously throughout the entire device so that a uniform breakdown current is generated, thus preventing element destruction due to current concentrations.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.