Semiconductor device and method of manufacturing the same
US6060736A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jul 29, 1998 |
| Grant date | May 9, 2000 |
| Priority date | — |
| Expiry date | Jul 29, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/684
Abstract
The present invention is a semiconductor device having a capacitor employing ferroelectrics as a capacitor insulating film. The semiconductor device comprises a semiconductor substrate 11, an insulating film 12 formed on the semiconductor substrate 11, and a capacitor including (a) a lower electrode formed on the insulating film and made of a refractory metal whose face orientation (111) appears on an upper surface thereof, (b) a capacitor insulating film formed on the lower electrode and made of at least two layers consisting of a ferroelectrics film including Pb having a face orientation (111) and a ferroelectrics film including Pb having a face orientation (100), and (c) an upper electrode 15 formed on the capacitor insulating film 14.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.