Semiconductor device
US6060747A · kind A · utility
36Cited by
5References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 23, 1998 |
| Grant date | May 9, 2000 |
| Priority date | — |
| Expiry date | Sep 23, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/519
Abstract
A semiconductor device is characterized in that source electrode contact regions, each of which is formed of a first conductivity type source layer and a second conductivity type base layer in a surface of a semiconductor surface, are formed at respective intersectional points of a diagonally-arranged lattice, and in that a trench having a gate electrode buried therein is formed so as to snake through the contact regions alternately. By virtue of the structure, the trench arrangement and source/base simultaneous contact quality are improved, to thereby increase a trench density (channel density) per unit area.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.