Semiconductor device having SOI-MOSFET
US6060750A · kind A · utility
10Cited by
4References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 29, 1997 |
| Grant date | May 9, 2000 |
| Priority date | — |
| Expiry date | Dec 29, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6708
Abstract
To suppress floating substrate in the thin SOI.MOSFET formed on the SOI substrate, the gate (electrode) has a two-layer structure and the upper gate thereof is in contact with the sides of the SOI layer (substrate).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.