Dai Hisamoto
10Patents
9h-index
12Co-inventors
65Inventor score
Filing activity: Aug 5, 1991 → Jun 12, 2003
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6873009B2 | Vertical semiconductor device with tunnel insulator in current path controlled by gate electrode | Electricity | 125 | Expired |
| US5355330A | Capacitive memory having a PN junction writing and tunneling through an insulator of a charge holding electrode | Electricity | 111 | Expired |
| US5466621A | Method of manufacturing a semiconductor device having silicon islands | Emerging Cross-Sectional Technologies | 101 | Expired |
| US5346834A | Method for manufacturing a semiconductor device and a semiconductor memory device | Emerging Cross-Sectional Technologies | 79 | Expired |
| US6504755B1 | Semiconductor memory device | Electricity | 59 | Expired |
| US5115289A | Semiconductor device and semiconductor memory device | Electricity | 56 | Expired |
| US6194763A | Semiconductor device having SOI-MOSFET | Electricity | 12 | Expired |
| US6861304B2 | Semiconductor integrated circuit device and method of manufacturing thereof | Electricity | 10 | Expired |
| US6060750A | Semiconductor device having SOI-MOSFET | Electricity | 10 | Expired |
| US5523965A | Semiconductor memory device and method of manufacturing same | Electricity | 1 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.