Method of manufacturing semiconductor device including light etching
US6063300A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 20, 1998 |
| Grant date | May 16, 2000 |
| Priority date | — |
| Expiry date | Feb 20, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76877
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device, including the steps of: cooling a semiconductor wafer to a predetermined temperature, the semiconductor wafer being mounted on a stage provided with cooling means and having a thin oxide film on a surface thereof; supplying energy to gas containing hydrogen and water vapor to excite the gas into a plasma state; adding nitrogen fluoride downstream into a flow of the gas in the plasma state; and introducing a flow of the gas, including the nitrogen fluoride, to the semiconductor wafer to etch the thin oxide film while maintaining the semiconductor wafer at the predetermined temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.