Wet-chemical, developable, etch-stable photoresist for UV radiation with a wavelength below 200 nm

US6063549A · kind A · utility

Assignee

• Arch Specialty Chemicals, Inc. · US

Inventors

• Ulrich Schadeli · Granges-Paccot, CH
• Manfred Hofmann · Hettstadt, DE
• Norbert Muenzel · Heitersheim, DE
• Arnold Grubenmann · Marly, CH

Key dates

• Filing date: May 27, 1998
• Grant date: May 16, 2000
• Expiry date: May 27, 2018

Classification

• Technology area (CPC G): Physics
• CPC primary: G03F7/40
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

Photoresist compositions are described, which are sufficiently transparent in the solvent-free state for radiation of a wavelength of approximately 193 nm, and which contain nonaromatic chemical groups, which can be converted into groups with aromatic structural elements (latent aromatic groups) under process conditions, for which an image structure comprised of the resist material is not disrupted. A preferred component with latent aromatic groups is bicyclo[3.2.2]nona-6,8-dien-3-one. Resist coatings, which are produced with these compositions, show a stability in plasma etching, which is comparable with the stability of conventional resists based on phenolic resins.