Formation of group III-V nitride films on sapphire substrates with reduced dislocation densities
US6064078A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 22, 1998 |
| Grant date | May 16, 2000 |
| Priority date | — |
| Expiry date | May 22, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0254
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A single layer of atoms of a selected valence is deposited between a substrate and a group III-V nitride film to improve the quality of the nitride film and of subsequently deposited nitride films on the substrate. The interlayer provides local charge neutrality at the interface, thereby promoting two-dimensional growth of the nitride film and reduced dislocation densities. When the substrate is sapphire, the interlayer should include atoms of group II elements and possibly group III elements. The structure can include a group III-V nitride buffer layer on the interlayer to further enhance the quality of the group III-V nitride films. The structures can be used in blue light emitting optoelectronic devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.